The S6R8008V1M is a 8,388,608-bit high-speed Static Random Access Memory organized as 1M words by 8 bits. SRAM’s Eagle groupsets offer 12-speeds and 50 teeth, providing a 500% gear ratio matching the capabilities of a double chainring in the front without the hassle or weight disadvantages. The S6R1008C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 128k words by 8 bits. The expanded Eagle ecosystem offers more range than ever before. 4M High-speed SRAM (256-kword × 16-bit) Back to top The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. 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D&R provides a directory of TSMC high speed single port sram compiler tsmc 40 nm cln40gl S6R1008V1A The S6R1008V1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 128k words by 8 bits. Lower/upper byte access is set by data byte control (NOT UB, NOT LB). Lower/upper byte access is set by data byte control (NOT UB, NOT LB). Shop the latest range of SRAM 11 Speed delivered free to the UK mainland*. The S6R8008C1M uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The data is retained in the nonvolatile cell integrated with each SRAM cell. 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout PIN ASSIGNMENT (Top View) 32-Pin, 400-mil Plastic SOJ (DJ) & Plastic TSOPII (DGC & DGCR) The AS5LC1008 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. Shop SRAM Mountain Bike Components. These features can place the outputs in High-Z for additional flexibility in system design. These devices are usually used as data buffers (temporary storage) and can be accessed randomly through their high-speed, single data rate (SDR) interface. The S6R4008W1A is a 4,194,304-bit high-speed Static Random Access Memory organized as 512k words by 8 bits. The IDT7130 is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the There are many forms of synchronous high-speed SRAM, which have different performance characteristics and advantages. The S6R1608V1M uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. They are fab [...] Stay logged in Login New here? Asynchronous SRAM. SRAM 32Mb,High-Speed-Automotive,Async,2048K x 16,12ns,2.4v-3.6v,48 Pin TSOP I, RoHS, Automotive temp 4,194,304-bit high-speed SRAM organized as 256k words by 16 bits.The device uses 16 common i/o lines & an output enable pin operating faster than address access time at read cycle. Tredz Price Match & hassle free 365 day returns. Technology for simplicity. 256K Low-Voltage Asynchronous SRAM bare die configured as 32K x 8, 16M High-Speed Low-Power Aynchronous SRAM bare die with 3.3V supply configured as 1M x 16, 16M High-Speed Low-Power Aynchronous SRAM bare die with 3.3V / 1.8V supply configured as 1M x 16, 16M High-Speed Low-Power Asynchronous SRAM bare die configured as 2M x 8, 4M High-Speed Low-Power Asynchronous SRAM bare die configured as 256K x 16, 8M High-Speed Low-Power Aynchronous SRAM bare die with 3.3V supply configured as 256K x 32, 8M High-Speed Low-Power Aynchronous SRAM bare die with on-chip ECC configured as 512K x 16, 8M High-Speed Low-Power Aynchronous SRAM bare die with on-chip ECC configured as 512K x 16, 4M High-Speed Low-Power Asynchronous SRAM bare die configured as 512K x 8, 1M High-Speed Low-Power Asynchronous SRAM bare die configured as 64K x 16, 1M Low Power Asynchronous SRAM bare die configured as 128K x 8, 16M High-Speed Low-Power Asynchronous SRAM bare die configured as 1M x 16, 8M High-Speed Ultra-Low-Power Asynchronous SRAM bare die configured as 1M x 8, 1M High-Speed Asynchronous SRAM bare die configured as 128K x 8, 4M High-Speed Asynchronous SRAM bare die configured as 256K x 16, 4M High-Speed Asynchronous SRAM bare die configured as 512K x 8, 1M High-Speed Asynchronous SRAM bare die configured as 64K x 16, Registered in England, Company No: 07654987. 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